PS EPAD



EPAD® (Electrically Programmable Analog Device) MOSFET with E-Trimmable Threshold Voltage Temp Range (degC): 0 to + 70
Part No.	Description	Features	Package Type	Thres- hold Voltage (Default) (V)	Thres- hold Voltage (Max)(V)	Offset Voltage (Max) (mV)	Drain On Current (Typ) (mA)	Drain Source On Resistance (Max) (Ohm)	Drain Source On Resistance Match (typ) (%)	Gate Input Leakage Current (Max) (pA)	Drain Source Leakage Current (Max) (pA)	Drain Source Break- down Voltage (Min)(V)
ALD1108EPC	Quad EPAD MOSFET	Quad as Dual N-channel Pair, common source	DIP-16	1	3	5	3	500	0.5	100	400	10
ALD1108ESC	Quad EPAD MOSFET	Quad as Dual N-channel Pair, common source	SO-16	1	3	5	3	500	0.5	100	400	10
ALD1110EPA	Dual EPAD MOSFET	N-channel Pair, common source	DIP-8	1	3	5	3	500	0.5	100	400	10
ALD1110ESA	Dual EPAD MOSFET	N-channel Pair, common source	SO-8	1	3	5	3	500	0.5	100	400	10
ALD1121EPA	Quad EPAD MOSFET	Dual N-channel , seperate source	DIP-8	1	3	5	3	500	0.5	100	400	10
ALD1121ESA	Quad EPAD MOSFET	Dual N-channel seperate source	SO-8	1	3	5	3	500	0.5	100	400	10
ALD1123EPC	Quad EPAD MOSFET	Quad N-channel, seperate source	DIP-16	1	3	5	3	500	0.5	100	400	10
ALD1123ESC	Quad EPAD MOSFET	Quad N-channel, seperate source	SO-16	1	3	5	3	500	0.5	100	400	10